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Energy Efficient Computation using Injection Locked Bias-Field Free Spin-Hall Nano-Oscillator Array with Shared Heavy Metal

机译:使用注射锁定偏置场自由旋转厅纳米振荡器阵列具有共用重金属的节能计算

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In this paper, we propose a bias field free Spin Hall Nano Oscillator (SHNO) device with perpendicular-to-plane magnetic anisotropy for alternative computing. Coupled oscillator networks can be used to perform computations such as edge detection of an image, associative computing, etc. that are un-suitable (inefficient) in von-Neumann computing models. Recent experiments on SHNOs have demonstrated their frequency of oscillation in gigahertz range, operating at low input currents. However, in the experiments so far, an external magnetic field is used for the operation of SHNOs. This can be mitigated by using the bias field free SHNO device structure proposed in this work. We also discuss the possibility of operating many 3 terminal SHNOs using a single current source by sharing the Spin Hall Metal (SHM) or Heavy Metal (HM) in an array. Biasing multiple SHNOs using single current source offers high energy efficiency at an array level compared to the conventional biasing technique. We also propose a design technique in which an adaptive external magnetic field is used to address the issue associated with shared heavy metal.
机译:在本文中,我们提出了一种具有垂直于平面磁各向异性的偏置场自由旋转霍尔纳米振荡器(SHNO)装置,用于替代计算。耦合振荡器网络可用于执行诸如在von-neumann计算模型中的图像,关联计算等的图像,关联计算等的边缘检测等计算。最近关于SHNO的实验已经证明了它们在Gigahertz范围内的振荡频率,在低输入电流下运行。然而,在该实验中,外部磁场用于SHNO的操作。这可以通过使用本工作中提出的偏置场自由SHNO器件结构来缓解。我们还通过在阵列中共享旋转霍尔金属(SHM)或重金属(HM),讨论使用单电流源使用单电流源的许多3终端SHNO的可能性。与传统的偏置技术相比,使用单电流源偏置多个SHNO在阵列水平上提供高能量效率。我们还提出了一种设计技术,其中使用自适应外部磁场来解决与共同的重金属相关联的问题。

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