An Analytical Surface Potential Model for Highly Doped Ultrashort Asymmetric Junctionless Transistor

摘要

Here, we present an analytical solution for surface potential of a heavily doped ultralow channel Double-Gate Asymmetric Junctionless Transistor (DG AJLT). The gate-oxide-thickness and flatband voltage asymmetry were taken into considerations; further, while solving 2D Poisson's equation both fixed and mobile charges in the silicon region regions were considered. To solve the 2D Poisson equation for the asymmetric DG junctionless transistor, we separate the solution of the channel potential into basic and perturbed terms. The equations derived from a general symmetric DG junctionless transistor are considered as basic terms, and using Fourier series a solution related to the perturbed terms for the asymmetric structures was obtained. The electrical characteristics predicted by the analytical model shows an excellent agreement with that of commercially available 3D numerical device simulators.