Electrical Characterization of Extended Fins by Using Wire- Bonded FinFETs

摘要

The threshold-voltage variation of scaling down FinFETs affects the reliability of FinFET-based circuits. This research explores individual and wire-bonded FinFETs in order to study their extended quantized width compared to continuous scaling width. Measurements on both wire-bonded 1-to-1-fin and wire-bonded 1-to-3-fin FinFETs show that threshold voltages are interpolated between two unbonded devices. The gate stress on wire-bonded FinFETs present more severe degradation than individual FinFETs possibly because of the induced coupling effect.