Test methods, test techniques and failure criteria for evaluation of ESD degradation of analog and radio frequency (RF) technology

摘要

This publication explores new test methods, and techniques to evaluate the influence of ESD damage on analog and radio frequency (RF) technology. The methods evaluate the relationship between transistor dc degradation and RF performance fT and f{maxMAX}, a dc shift criteria vs pre- and post-RF functional product test degradation results, a Time Domain Reflection (TDR) reflection method, and a pre- and post- stress “eye test” evaluation method.