Design Analysis of Lattice-Matched AlInGaN-GaN QW for Optimized Intersubband Absorption in the Mid-IR Regime

摘要

Design analysis of Ill-Nitride based intersubband quantum well absorption in the mid-IR regime (λ～ 3-5 μm) is presented. The use of lattice-matched AlInGaN materials is advantageous because of its extremely fast intersubband relaxation time τ_(rel) ～150-fs. The ability to engineer lattice-matched AlInGaN layer with GaN should allow realization of multiple pairs of AlInGaN / GaN quantum well structures, which would otherwise be challenging due to the cracking issues that might develop in conventional multiple pairs AlGaN / GaN heterostructures. The large conduction band offset in Ⅲ-Nitride heterostructures is also beneficial for minimizing dark current and thermal noise.