Design of all-optical OR/NAND logic gate using plasmonic metal-insulator-metal waveguide

摘要

Recently, optical waveguides designed by utilizing metal-insulator-metal (MIM) are widely used because of its excellent ability to limit surface plasmons to a deep sub-wavelength scale. In this paper, combined design of OR and universal NAND logic gates is proposed using the switching property of non-linear effect of plasmonic-MIM waveguide-based Mach-Zehnder interferometer. The footprint of proposed Feynman logic gate is 42μm*9μm, extinction ratio is 9.03dB for NAND gate and 11.25dB for OR gate. An insertion loss of-0.705dB for NAND gate and -0.655 dB for OR which is much better as compared to electro-optic based structures. The simulation is done using a finite-difference time-domain (FDTD) method and mathematical modeling of the device that has been verified by using MATLAB.