Compact Modeling of SiGe HBTs for Design of Cryogenic Control and Readout Circuits for Quantum Computing

摘要

A HICUM/L0 compact model is extracted for advanced SiGe HBTs operating at 12 K, targeting potential use for control and readout applications in quantum computing. Due to the presence of transistor non-idealities, extraction procedures are modified from room temperature approaches. The resultant compact model shows good accuracy in both small-signal and large-signal prediction when compared to 12 K measurements for a wideband cryogenic low noise amplifier. Important factors for model accuracy are investigated through sensitivity analysis. This is the first demonstration of a DC, small-signal, and large-signal compact model for SiGe HBTs operating at deep cryogenic temperatures.