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Characterization of SiC and Al2O3 Ceramics Exposed to Nitrogen Ions from Inverse-Z Pinch Plasma Discharge

机译:SiC和Al 2 O 3 陶瓷从逆Z夹夹等离子体放电暴露于氮离子的陶瓷

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Silicon carbide ceramics are used for several industry applications, such as structural coating, ballistic armor, thermal coating protection, high performance mirror substrate, catalyst supports, etc. In this work, dense SiC ceramics with different amounts of Y2O3 and Al2O3 were exposed to a plasma technique that has recently been used for material treatment called plasma expander. This process is based on the inverse Zpinch effect. Interaction of the shock waves generated by the expander with ceramic surfaces can change, for example, the wettability and the morphology of sample surface. In this paper SiC and Al2O3 ceramics were formed by using uniaxial and isostatic pressing method and sintered, respectively, at 1950 °C and 1600°C. The SiC ceramics were produced with additive YAG in proportions of 5 wt%, 7.6 wt% and 10 wt%. On the other hand, Al2O3 ceramics were produced with 0.15 wt% MgO. All samples were sanded and polished by using the same process. The ceramics received an average of 1440 plasma pulses with discharges made at equal intervals of 20 minutes, using nitrogen as carrier gas. The use of this innovative plasma technique produced significant changes on the SiC ceramics surface. On the other hand, the alumina ceramics, that have dielectric characteristics, showed slight change after exposure to a plasma expander.
机译:碳化硅陶瓷用于几种行业应用,如结构涂层,弹道铠装,热涂层保护,高性能镜衬底,催化剂载体等。在这项工作中,致密的SiC陶瓷用不同量的y 2 O. 3 和al. 2 O. 3 暴露于最近用于称为血浆膨胀机的材料处理的等离子体技术。此过程基于逆Zpinch效果。膨胀机产生的冲击波与陶瓷表面产生的相互作用可以改变例如样品表面的润湿性和形态。在本文和al 2 O. 3 通过使用单轴和等静压方法和烧结,在1950℃和1600℃下烧结形成陶瓷。 SiC陶瓷用添加剂YAG制备,比例为5wt%,7.6wt%和10wt%。另一方面,al 2 O. 3 用0.15wt%MgO制备陶瓷。通过使用相同的方法砂磨和抛光所有样品。陶瓷在使用氮气作为载气的平均间隔为20分钟的平均接收1440个等离子体脉冲。这种创新的等离子体技术的使用产生了SiC陶瓷表面的显着变化。另一方面,具有介电特性的氧化铝陶瓷,在暴露于等离子体膨胀器后显示出轻微的变化。

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