Micrometric mapping of absolute trapping defects density using quantitative luminescence imaging

摘要

In the present study, we develop a contactless optical characterization tool that quantifies and maps the trapping defects density within a thin film photovoltaic device. This is achieved by probing time-resolved photoluminescence and numerically reconstructing the experimental decays under several excitation conditions. The values of defects density in different Cu(In,Ga)Se2 solar cells were extracted and linked to photovoltaic performances such as the open-circuit voltage. In the second part of the work, the authors established a micrometric map of the trapping defects density. This revealed areas within the thin film CIGS solar cell with low photovoltaic performance and high trapping defects density. The final part of the work was dedicated to finding the origin of the spatial fluctuations of the thin film transport properties. To do so, we started by establishing a micrometric map of the absolute quasi-Fermi levels splitting within the same CIGS solar cell, using the hyperspectral imager. A correlation is obtained between the map of quasi-Fermi levels splitting of and the map of the trapping defects density. The latter is found to be the origin of the frequently observed spatial fluctuations of thin film materials properties.