We are studying the plasma density response with pressure in indium antimonide (InSb), with the goal of developing a solid-state pressure gradient transducer1. InSb has a large room temperature mobility (7.7 m2/Vs) and a relatively large pressure response, key attributes in our sensor development. We use intrinsic InSb, where the free carrier concentration depends only on the energy band gap and the temperature. The band gap has pressure dependence2, so the plasma density is pressure dependent.
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