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A hybrid model for coating and charging of submicron particles submerged in a CH4-H2 plasma

机译:CH4-H2等离子体浸没在CH4-H2等离子体中亚微米颗粒的涂布和充电混合模型

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Summary form only given. In the framework of material processing, plasma chemical vapor deposition represents an attracting route for surface modification of submicron particles. However, a great deal of effort has yet to be invested to render such processes efficient. An important step is clearly defined by pursuing a better understanding of the physics occurring in proximity of such particles. This can be offered by predicting the complete details of the plasma behavior by use of numerical simulations. In the present work, we consider a submicron particle submerged in a reactive and dense CH4/H2 plasma, for which the characteristic length scales, (i.e., the mean free path of species (lambdamfp) and the Debye length (Lambda De)), are of the same order of magnitude (lambdamfp ~ LambdaDe). Therefore, at a distance far from the particle, the continuum model can be implemented, whereas in vicinity of the particle we will make use of particle-in-cell (PIC) method along with Monte Carlo collision (MCC) simulation approach. In particular, we will adopt the MC null collision method to account for collisions of electrons and ions with neutral species, whereas we will model the screen-Coulomb interactions via the time-implicit MCC algorithm proposed by Cranfill et al. In the former, the probability of collision is obtained upon calculation of collision frequencies from information regarding local neutral gas properties (e.g., T and P), cross sections for the electrons/ions-neutral collisions as a function of energy, and the charged species velocities. In the latter, the collisional scattering is modeled as a statistical rotation of the momentum vector, where the relative rotational angle represents the accumulation of many small random deflections. Such rotation needs to satisfy the generalized Ohm's law on the average. Finally, a matching condition will be formulated to provide continuity between the two re-gions
机译:摘要表格仅给出。在材料加工框架中,等离子体化学气相沉积代表亚微米颗粒表面改性的吸引途径。然而,尚未投入大量努力,以促进此类流程效率。通过追求在此类颗粒附近发生的物理学来清楚地定义一个重要的步骤。这可以通过使用数值模拟预测等离子体行为的完整细节来提供。在本作的工作中,我们认为沉淀在反应性和致密CH <亚> 4 / h 2 等离子体中的亚微米粒子,其中特征长度尺度(即,均值物种路径(Lambda mfp )和deybe长度(lambda de ),幅度相同(lambda mfp 〜lambda de )。因此,在远离颗粒的距离处,可以实现连续体型,而在粒子附近,我们将利用粒子 - 细胞(PIC)方法以及蒙特卡罗碰撞(MCC)仿真方法。特别是,我们将采用MC NULL碰撞方法来解释电子和离子与中性物种的碰撞,而我们将通过Cranfill等人提出的时间隐式MCC算法模拟屏幕 - 库仑相互作用。在前者中,在从关于局部中性气体特性(例如,T和P)的信息计算的碰撞频率时,获得碰撞概率,电子/离子 - 中性碰撞的横截面作为能量的函数,以及带电物种速度。在后者中,碰撞散射被建模为动量矢量的统计旋转,其中相对旋转角度表示许多小随机偏转的累积。这种旋转需要在平均值上满足广义欧姆的法律。最后,将配制匹配条件以提供两个重新聚会之间的连续性

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