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The RowHammer Problem and Other Issues We May Face as Memory Becomes Denser

机译:作为记忆变得更密集的Rowhammer问题和我们可能面临的其他问题

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As memory scales down to smaller technology nodes, new failure mechanisms emerge that threaten its correct operation. If such failure mechanisms are not anticipated and corrected, they can not only degrade system reliability and availability but also, perhaps even more importantly, open up security vulnerabilities: a malicious attacker can exploit the exposed failure mechanism to take over the entire system. As such, new failure mechanisms in memory can become practical and significant threats to system security. In this work, we discuss the RowHammer problem in DRAM, which is a prime (and perhaps the first) example of how a circuit-level failure mechanism in DRAM can cause a practical and widespread system security vulnerability. RowHammer, as it is popularly referred to, is the phenomenon that repeatedly accessing a row in a modern DRAM chip causes bit flips in physically-adjacent rows at consistently predictable bit locations. It is caused by a hardware failure mechanism called DRAM disturbance errors, which is a manifestation of circuit-level cell-to-cell interference in a scaled memory technology. Researchers from Google Project Zero recently demonstrated that this hardware failure mechanism can be effectively exploited by user-level programs to gain kernel privileges on real systems. Several other recent works demonstrated other practical attacks exploiting RowHammer. These include remote takeover of a server vulnerable to RowHammer, takeover of a victim virtual machine by another virtual machine running on the same system, and takeover of a mobile device by a malicious user-level application that requires no permissions. We analyze the root causes of the RowHammer problem and examine various solutions. We also discuss what other vulnerabilities may be lurking in DRAM and other types of memories, e.g., NAND flash memory or Phase Change Memory, that can potentially threaten the foundations of secure systems, as the memory technologies scale to higher densities. We conclude by describing and advocating a principled approach to memory reliability and security research that can enable us to better anticipate and prevent such vulnerabilities.
机译:随着内存缩小到较小的技术节点,新的失败机制出现了威胁其正确操作。如果未预期和更正此类故障机制,则它们不仅可以降低系统的可靠性和可用性,而且还可以更重要的是,开辟安全漏洞:恶意攻击者可以利用暴露的失败机制接管整个系统。因此,内存中的新故障机制可能成为对系统安全性的实用性和重大威胁。在这项工作中,我们讨论DRAM中的Rowhammer问题,这是DRAM中的电路级故障机制如何导致实用和广泛的系统安全漏洞的素数(也许是第一个)示例。正如普遍所说的那样,Rowhammer是在现代DRAM芯片中重复访问行的现象导致位于物理相邻行的持续可预测位位置的比特翻转。它是由称为DRAM干扰误差的硬件故障机制引起的,这是缩放存储技术中的电路级单元对电池干扰的表现。 Google Project Zero的研究人员最近展示了该硬件故障机制可以通过用户级程序有效利用,以获得真实系统上的内核权限。其他几个最近的作品展示了利用行的其他实际攻击。这些包括远程接管易受Rowhammer的服务器,通过在同一系统上运行的另一个虚拟机接管受害者虚拟机,以及通过不需要许可的恶意用户级应用程序接管移动设备。我们分析了Rowhammer问题的根本原因,并检查了各种解决方案。我们还讨论了其他漏洞中可能在DRAM和其他类型的存储器中潜伏的漏洞,例如,NAND闪存或相变存储器,这可能会威胁到安全系统的基础,因为存储器技术缩放到更高的密度。我们通过描述和提倡内存可靠性和安全研究的原则方法来结束,这使我们能够更好地预测并防止这种漏洞。

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