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Many-body Effects on the High Injection Level Performance for Micro Light Emitting Diode

机译:对微发光二极管的高注射水平性能的许多体积

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摘要

In this work, many-body effects including band-gap renormalization (BGR), Coulomb enhancement (CE) and carrier collisions (CS) are considered when the micro light emitting diode (micro-LED) operates in the injection level above 100 kA/cm2. Electroluminescence (EL) spectra of 20 micron-diameter LEDs show the redshift and broadening with current density increasing from 50 to 360 kA/cm2. An abnormal increases of external quantum efficiency (EQE) are observed above 100 kA/cm2. BGR effect combined with thermal effect lead to redshift of EL peak wavelength. Carriers collision dominates spectral width. CE enhances radiative recombination and also results in blue shift of peak wavelength.
机译:在这项工作中,当微发光二极管(微LED)以高于100ka /的喷射水平操作时,考虑包括带间隙重整化(BGR),库仑增强(CS)和载体冲突(CS)的许多身体效应。厘米 2 。 20微米直径LED的电致发光(EL)光谱显示出电流密度从50到360 ka / cm增加的电流密度 2 。在100ka / cm以上观察到外部量子效率(EQE)的异常增加 2 。 BGR效应与热效应相结合,导致EL峰值波长的红移。载体碰撞主导光谱宽度。 CE增强辐射重组,也导致峰值波长的蓝色偏移。

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