Laser induced molecular beam epitaxy of GaN

摘要

Since some years the group-III nitrides (InN, GaN, AlN) and related alloys have been recognized as important materials for efficient light emitting diodes and laser diodes in the visible and ultraviolet region, because they have a wide and direct bandgap (1,2). Due to their high thermal stability and high thermal conductivity thy can also used for the fabrication of a wide variety of high-power and high-temperature electronic devices like transistors and UV photodetectors (3,4).