In-line Monitoring of Advanced Copper CMP Processes with Picosecond Ultrasonic Metrology

摘要

Chemical mechanical planarization (CMP) is a challenging process step for manufacturers implementing dual-damascene architectures at the 65 nm technology node. The polishing rate can vary significantly from wafer-to-wafer, across a single wafer, and across a single die, depending on factors including electroplate profile, slurry chemistry, pad wear, and underlying structure. The process is further complicated by the introduction of low-k dielectrics that have significantly different mechanical properties than the harder SiO_2 they replace. Picosecond ultrasonics is a nondestructive, small-spot method that can be used for in-line on-product monitoring of metal processes including copper CMP. In this paper we will present gauge-capable picosecond ultrasonic results on copper erosion test structures that also demonstrate excellent correlation with electrical test measurements and TEM results on 65 nm products.