A 40nm 2Mb ReRAM Macro with 85 Reduction in FORMING Time and 99 Reduction in Page-Write Time Using Auto-FORMING and Auto-Write Schemes

摘要

This work proposes (1) an auto-forming (AF) scheme to shorten the macro forming time (TFM-M) and testing costs; (2) an auto-RESET (ARST) scheme to shorten page-RESET time (TW-PAGE-RST) for expanding the applications of hidden-RESET operation in standby mode, and (3) an auto-SET (ASET) scheme to shorten page-write time (TW-PAGE) combined with hidden-RESET scheme. A fabricated 40nm 2Mb ReRAM macro achieved 85+% reduction in T_FM-_M, and 99+% reduction in TW-PAGE for a page. For the first time, AF, ARST, and ASET schemes are demonstrated in silicon for ReRAM.