Short-Channel Performance and Mobility Analysis of <110>- and <100>-Oriented Tri-Gate Nanowire MOSFETs with Raised Source/Drain Extensions

摘要

Nanowire transistors (NW Tr.) are promising for ultimate scaling [1]. However, parasitic resistance (RsD) [2,3] and NW mobility (p) degradation [4] limit 4. Although Schottky S/D was proposed for low Rn, [2], silicidation- process of NW is hard to control [5]. Also, quantitative understanding of NW mobility is still insufficient. Moreover, most studies reported <110> NW Tr. and short-L performance of <100> NW Tr. has not been examined yet.