Ultra-thin <10nm) Dual-oxide (Al2O3/TiO2) Hybrid Device (Memory/Selector) with Extremely Low Ioff <1nA) and Ireset <1nA) for 3D Storage Class Memory

摘要

We demonstrate ultra-thin ALD-processed dual-oxide (Al₂O₃/TiO₂) hybrid device with memory and selector characteristics by engineering the stability of metal filament in Al₂O₃ and TiO₂ layer. The optimized hybrid memory device shows outstanding performances such as low off current , low reset current , and high on/off ratio . Inserting a Ti buffer layer which has a low electrode potential value, we observed excellent uniformity and retention property. Finally, an outstanding read/write margins and ultra-low power consumption are confirmed through array simulations of the proposed hybrid memory device.