A Novel Bit Alterable 3D NAND Flash Using Junction-free P-channel Device with Band-to-Band Tunneling Induced Hot-Electron Programming

摘要

We demonstrate a novel p-channel 3D stackable NAND Flash that uses completely new programming and erasing methods. The p-channel 3D NAND avoids the disadvantage of GIDL induced hole erase of floating body n-channel NAND, giving a highly efficient -FN hole erasing and negligible disturb on the SSL and GSL devices. The p-channel NAND structure enables a novel -FN erase selection method, providing a unique feature of bit alterable erase that facilitates small-unit random code overwrite without block erase. Furthermore, the band-to-band tunneling induced hot-electron programming method provides lower operation voltage and is good for peripheral CMOS scaling. The device concept is demonstrated on a 37.5nm half-pitch 3D vertical gate (VG) junction-free NAND architecture.