Very High κ and High Density TiTaO MIM Capacitors for Analog and RF applications

摘要

For the first time, high density (10.3 fF/μm{sup}2), low voltage linearity (α=89 ppm/V{sup}2) and small leakage current (1.2×10{sup}(-8) A/cm{sup}2) or 5.8 fA/[pF·V] at 2V) meet all the ITRS requirements of analog capacitor at year 2018. These are achieved by novel high-K TiTaO (k=45) and high work-function Ir capacitor, which further improve to very high 23 fF/μm{sup}2) density and low 81 ppm/V{sup}2) linearity for higher speed analog/RF ICs at 1GHz, using the fast a decay mechanism with increasing frequency.