Investigations of bulk dynamic threshold-voltage MOSFET with 65GHz 'Normal-mode' Ft and 220GHz 'over-drive mode' Ft for RF applications

摘要

The RF properties of bulk dynamic threshold-voltage MOSFET (BDTMOS) with a deep n-well isolation was investigated both under the normal DTMOS mode and two newly-proposed DTMOS operation modes: moderate (0.6V < Vgs=Vbs <0.85V) and over-drive (Vgs=Vbs > 0.85V) modes. While Ft can be improved to 65GHz at 12.5mA with 1.5V Vds bias under normal-mode DTMOS operation. a high it of 220GHz with good linearity and stability is achieved under over-drive mode of operation.