A low voltage graded-channel MOSFET (LV-GCMOS) for sub 1-volt microcontroller application

摘要

We report for the first time, a bulk silicon, low voltage graded-channel MOSFET (LV-GCMOS) capable of operating below 1 volt, while delivering the required circuit performance. Channel engineering enabled a lowering of the subthreshold slope by more than 10 mV/dec, allowing for a reduction in the threshold voltage without causing excessive leakage. A 1-Volt HC08 based microcontroller has been built with this technology, achieving 1 MHz operation at 0.9 V, with low stand-by leakage.