Decomposition-aware layout optimization for 20/14nm standard cells

摘要

Decomposition-aware layout design improvements for 8, 9, 11, and 13-track 20/14nm standard cells are presented. Using a decomposition-aware scoring methodology that quantifies the manufacturability of layouts, the Double Patterning Technology (DPT)-compliant layouts are optimized for DPT-specific metrics that include: the density difference between the two decomposition mask layers, the enclosure of stitching areas, the density of stitches, and the design regularity of stitching areas. For a 9-track standard cell, eliminating the stitches from the layout design improved the composite score from 0.53 to 0.70.