Loss Compensation in Hybrid Plasmonic Waveguide by Controlled Electron Injection

摘要

The optical loss is compensated for tightly confined hybrid plasmonic mode in dielectric layer of 10-nm using controlled electron injection. The electron tunneling by band bending of high index layer of InGaP and leaky optical mode coupled with plasmonic mode provide low loss plasmonic device with smaller mode area of X~2/200. The InGaP provide larger tunneling current compared to silicon for loss compensation of guided mode. The phase modulation provides 670-μm of Pi shift wavelength with optical gain of 2.39 dB of intensity. The proposed device can be used in the application of optical interconnects and modulation.