Forming-free resistive switching in nanocrystalline hafnium oxide films

摘要

This work presents the results of the investigations of resistive switching effect in Si(100)/HfO2 structure. It was shown that resistive switching from HRS to LRS occurred at 0.4±0.1 V, and from LRS to HRS at -0.5±0.1 V. An increase in the sweep voltage from 1 to 5 V led to a decrease in the HRS/LRS ratio from 606±36 to 204±11. Thus, it was shown that the nanocrystalline HfO2 film resistance varied within two orders of magnitude at a sweep voltage of 1 V within 15 measurements. The results can be useful for manufacturing neuromorphic systems based on forming-free nanocrystalline HfO2 films.