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(Invited) Thermal Transport in 2D Materials from First Principles: The Role of Interface and Substrate

机译:(邀请)来自第一原理的2D材料中的热传输:界面和基材的作用

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The persistent down-scaling of nanostructures, such as electronic devices, sensors, NEMS, and nanocomposites, increases the surface-to-volume ratio and introduces atomic-scale disorder at boundaries and interfaces. To avoid these issues, the nanoelectronics community has turned to intrinsically two-dimensional (2D) materials platforms. 2D materials have tremendous potential for next-generation nanoelectronics beyond the 5 nm technology node due to their atomic flatness and absence of dangling bonds, which prevents scattering from interface roughness. However, heat dissipation and its removal from hot spots in the monolayer remains a critical concern to the design of 2D-based devices. Thermal currents flowing in an atomic layer can either dissipate through source/drain contacts in a transistor configuration, or through a supporting substrate via van der Waals (vdW) coupling to it. When a 2D material is supported by a substrate, the interfacial area formed between it and the substrate is often far larger than the lateral source/drain contact area. Thus, the majority of waste heat is removed across the 2D-substrate interface and then via the substrate.
机译:纳米结构的持续下缩放,例如电子器件,传感器,NEM和纳米复合材料,增加了表面对体积比,并在边界和界面引入原子垢障碍。为避免这些问题,纳米电子界已经转向本质上二维(2D)材料平台。由于其原子平坦度和悬垂键的缺失,2D材料具有超出5nm技术节点的下一代纳米电子提供的巨大潜力,这防止了沿界面粗糙度散射。然而,散热和从单层中的热点移除仍然是设计2D基设备的关键问题。在原子层中流动的热电流可以通过晶体管构造中的源极/漏极触点或通过支撑基板通过van der waals(Vdw)耦合而散发。当基板支撑2D材料时,在其和基板之间形成的界面区域通常远远大于侧源/漏极接触区域。因此,在2D衬底界面中除去大部分废物,然后通过基板去除。

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