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(Plenary) The Revival of Compound Semiconductors and How They Will Change the World in a 5G/6G Era

机译:(全体会议)复合半导体的复兴以及他们将如何在5G / 6G时代改变世界

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Compound semiconductor devices have always intrigued the semiconductor industry due to their high intrinsic mobilities and the heterostructure engineering enabled by those materials. While CMOS has been the vehicle pushing the industry to ever smaller devices, better performance and of course reduced cost, the unique properties of compound semiconductor devices are finding renewed interest in an era where an increasing amount of data is being sent around, stored and analyzed. While several applications like photonics, high-power electronics and image sensors also benefit from enabling a variety of III-V materials and devices, specifically, in the RF Front-End Modules of 5G radio chips, these materials allow to address the challenges related to speed, efficiency and output power needed for this next generation wireless communication standard. And while 5G is in full deployment, with first addressing the sub-6GHz frequency bands and in a later phase the mm-wave frequency bands, first publications are already appearing on 6G, where even higher frequencies (beyond > 100GHz) will be targeted.
机译:由于它们的高内在迁移率和由这些材料实现的异质结构工程,复合半导体器件始终呼吸半导体行业。虽然CMOS一直是将业界推向更小的设备的车辆,但更好的性能和成本降低,化合物半导体器件的独特属性在当时的时代发现越来越多的数据,存储和分析。虽然像光子学,高功率电子和图像传感器等几种应用也受益于实现各种III-V材料和器件,但具体而言,在5G无线电芯片的RF前端模块中,这些材料允许解决与之相关的挑战下一代无线通信标准所需的速度,效率和输出功率。虽然5G处于完全部署,但首先通过首先寻址子6GHz频带,并且在后面的MM波频带中,首先出现在6G上,其中甚至更高的频率(超越> 100GHz)将被定位。

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