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Structural Engineering of Highly Accessible Edge Sites and Electronic Optimization of N-MoS_2 for Efficient Hydrogen Evolution

机译:高效边缘网站的结构工程和N-MOS_2的电子优化,以实现高效氢化

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Superior HER performance of MoS_2 electrocatalyst has been demonstrated due to the low free energy of hydrogen adsorption, electrochemical stability and cost-effectiveness. However, experimental and theoretical studies reveal that the HER activity of MoS_2 remains unsatisfactory due to the inactive basal planes, low intrinsic electronic conductivity and restacking of 2D layered nanosheets. To overcome these challenges, maximizing the accessible active sites and enhancing the conductivity of MoS_2 are critical to boost its HER performance. Herein, we perform structural engineering of MoS_2 electrocatalyst by developing a self-template strategy realizing a "0D/3D" nanostructure of N-doped MoS_2 nanocrystals anchored on carbon network (N-MoS_2/CN). As-prepared N-MoS_2/CN could address the above-mentioned issues: 1) N dopants in MoS_2 could simultaneously boost HER activity of the edge and enhance electronic conductivity of the basal plane; 2) The ultrasmall size of N-MoS_2 nanocrystals largely enriches the density of active edge sites; 3) The 3D hierarchically porous structure of the carbon substrate delivers the accessibility of H_3O~+ ions from electrolyte to active sites on MoS_2 and also facilitates the charge transfer during the HER process. Consequently, N-MoS_2/CN exhibits an onset potential of -30 mV vs. RHE, an overpotential of 114 mV at a current density of 10 mA cm~(-2) and a Tafel slope of 46.8 mV dec~(-1), demonstrating one of the best HER performance among various nanostructured MoS_2 electrocatalysts.
机译:由于氢吸附,电化学稳定性和成本效益的低能量,已经证明了MOS_2电催化剂的优越性。然而,实验和理论研究表明,由于不活跃的基底平面,低固有的电子电导率和折叠2D层状纳米片,她的MOS_2的活性仍然不令人满意。为了克服这些挑战,最大化可访问的活动站点并增强MOS_2的电导率对于提升其性能至关重要。在此,我们通过开发在锚定在碳网络上的n掺杂MOS_2纳米晶体的“0d / 3d”纳米结构的自模模板策略来执行MOS_2电催化剂的结构工程(N-MOS_2 / CN)。由于制备的N-MOS_2 / CN可以解决上述问题:1)MOS_2中的N掺杂剂可以同时提高边缘的活动并增强基底平面的电子电导率; 2)N-MOS_2纳米晶体的超大尺寸大大富集了主动边缘位点的密度; 3)碳基质的3D层次多孔结构可从电解质到MOS_2上的活性位点提供H_3O〜+离子的可访问性,并且还促进了在她的过程中的电荷转移。因此,N-MOS_2 / CN表现出-30mV与RHE的起始电位,在10 mA cm〜(-2)的电流密度下的114mV的过电位和46.8 mV DEC〜(-1)的TAFEL斜率,展示各种纳米结构MOS_2电催化剂中最好的性能之一。

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