Fabrication of Graphene-Inserted Tunneling Device (GiTD) for Emerging Spin Devices

摘要

Spintronics, which utilizes the spin degree of freedom of elementary particles, holds the promise for many attractive applications including non-volatile logic and storage. However, the main challenge is to achieve spin manipulation (spin injection, transport and detection) with high efficiencies. Here in this work, we focus on spin injection from the nanomagnet to another layer, which is typically degraded by any conductivity mismatch and/or interfacial imperfections. Inserting a tunnel barrier between the ferromagnetic and channel layers has shown to relieve this problem.