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Variation of Seebeck coefficient in ultrathin si layer by tuning its Fermi energy

机译:通过调整其FERMI能量来超薄SI层塞贝克系数的变异

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We have varied the Seebeck coefficient of n-type ultrathin Si-on-insulator (SOI) layer by tuning the Fermi energy. The Fermi energy was tuned by doping P atoms into the SOI layer and by injecting carriers by applying an external bias to the SOI surface with respect to the p-Si substrate. It was found that the Seebeck coefficient decreases with increasing the impurity concentration, with a peak around 1× 1020 cm−3From the calculated density-of-states (DOS), it is considered that the peak in Seebeck coefficient is likely to be due to the formation of impurity band near the conduction-band edge, which will demolish the sharp features in low-dimensional DOS. On the other hand, the Seebeck coefficient is found to increase with increasing the external bias which is in agreement with the variation of carrier concentration in the SOI layer under external bias and it is found that the Fermi energy can be controlled without the influences of impurity band.
机译:通过调整费米能量,我们通过调整了N型超薄Si-on-绝缘体(SOI)层的塞贝克系数。 通过将P原子掺杂进入SOI层并通过相对于P-Si衬底施加外部偏压来注入载体来调谐FERMI能量。 发现塞贝克系数随着杂质浓度的增加而降低,峰值左右1× 10 20 cm − 3 从计算的状态的态度(doS)中,认为塞贝克系数的峰值可能是由于 在导通带边缘附近的形成杂质带,这将使低维DOS中的尖锐特征拆除。 另一方面,发现塞贝克系数随着外部偏差而增加,随着外部偏压下的SOI层中的载流子浓度的变化而增加,发现可以控制费米能量而不会影响杂质的影响 乐队。

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