Effect of Gauss doping profile on electric potential of p-n diode

摘要

This study aimed to determine the effects of Gauss doping profile on electric potential of p-n diode. This effect is studied by simulating PN diodes at equilibrium condition with differences in doping fall-off constant (dfc) using MATLAB and COMSOL software. According to the simulation results, it concluded that p-n diode with different Gaussian doping profile, will produce similar built-in voltage (VGbi). But, each p-n diode with different Gaussian doping profile, has different maximum junction voltage (Vjmax) and minimum junction voltage (Vjmin). These junction voltages have strong correlation with dfc. We propose an equation of built-in voltage for Gauss Doping Profile, and also equations of Vjmax and Vjmin•