We investigated the optical properties of Ge1-xSnx layers with Sn contents more than 15%. We measured the direct gaps of Ge1-xSnx epitaxial layers with a very high Sn content over 15%, and show the Sn content dependence of the bowing parameter for the direct gap. The bowing parameter for Ge1-xSnx epitaxial layers were determined to be b = ?4.77 x + 2.47 (eV).
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机译：我们调查了GE1-XSNX层的光学性质，SN内容超过15％。 我们测量了GE1-XSNX外延层的直接间隙，具有超过15％的非常高的SN含量，并显示出直接间隙的弯曲参数的SN含量依赖性。 将GE1-XSNX外延层的弓形参数确定为B = 4.77 x + 2.47（EV）。
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