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A single-chip tri-band low-noise amplifier for cellular transceiver in the wireless applications

机译:用于无线应用中的蜂窝收发器的单芯片三带低噪声放大器

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In this paper the aim is to design and simulate a novel and single Chip consists of a tri-band low noise amplifier (LNA) operating simultaneously at three frequency bands 1.9 GHz, 2.4 GHz and 5 GHz for WLAN, WiFi and WiMax receivers, is designed and presented in this paper. It can be used in many applications of wireless communication (GSM, Zigbee, Bluetooth, Wi-Fi, HiperLAN, UWB, etc …) for 3G and 4G networks. The proposed circuit is based on two amplifiers, dual-band and simple band, with transistor GaAs FET type ATF 10136 that has a better performance, successful integration of feasibility and a low price compared with other technologies. Simulations of the operation of the amplifier were performed with the software Agilent Advanced Design System (ADS) and Ansoft software and performance of the amplifier were recorded and analyzed. A single stage LNA has successfully been designed with 29.3dB, 24.56dB and 11.93dB with noise figure of 0.44dB, 0.49dB and 4.42dB respectively at three frequency bands 1.9 GHz, 2.5 GHz and 5 GHz.
机译:在本文中,目的是设计和模拟新颖,单芯片由三频段低噪声放大器(LNA)在三个频段,2.4GHz和5 GHz用于WLAN,WiFi和WiMAX接收器的三个频段。本文设计和介绍。它可以用于3G和4G网络的无线通信(GSM,ZigBee,Bluetooth,Wi-Fi,Hiperlan,UWB等)的许多应用中。所提出的电路基于两个放大器,双频和简单频带,具有晶体管GaAs FET型ATF 10136,与其他技术相比,具有更好的性能,成功集成和低廉的价格。使用软件安捷伦高级设计系统(广告)和ANSOFT软件进行了仿真,并记录并分析了放大器的性能。单级LNA成功设计为29.3dB,24.56dB和11.93dB,分别以0.44dB,0.49dB和4.42dB的噪声系数为3.9 GHz,2.5 GHz和5 GHz。

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