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Silicon-induced alleviation of cadmium toxicity in hyperaccumulator Solanum nigrum L

机译:硅诱导的超读物梭氏菌毒性镉毒性

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Silicon-induced amelioration of cadmium toxicity in the cadmium-hyperaccumulator Solanum nigrum L was investigated. Four-week-old seedlings of S. nigrum exposed to 200 µmol/L Cd with or without 1 mmol/L Si for 4 days. Malondialdehyde and electrolyte leakage in leaves were dramatically enhanced in single Cd treatment, and photosynthesis and biomass were seriously depressed. In comparison with the Cd treatment alone, lipid peroxidation and electrolyte leakage were significantly reduced in Cd plus Si treatment; shoot height, root length and dry weight were strongly increased; in addition, Cd concentrations in seedlings were decreased, while Cd translocation from root to shoot was remarkably enhanced. Furthermore, the activities of superoxide dismutase, peroxidases, and catalase in Cd plus Si treatment were significantly lower than that in Cd treatment alone, this decrease might be attributed to the reduction of Cd concentrations and Cd-induced oxidative damage by Si application.
机译:研究了硅诱导的镉毒性在CADIUM-HyperAcumulator Solanum Nigrum L中的改善。 4周龄幼苗的幼苗暴露于200µ mol / l cd,或没有1 mmol / l si 4天。 在单CD处理中,叶片中的丙二醛和电解质泄漏显着增强,并且严重抑制了光合作用和生物质。 与单独的CD处理相比,CD加SI处理显着降低了脂质过氧化和电解质泄漏; 拍摄高度,根长度和干重强烈增加; 此外,幼苗中的Cd浓度降低,而来自根部芽的CD易位显着增强。 此外,CD加SI处理中超氧化物歧化酶,过氧化物酶和过氧化氢酶的活性显着低于CD处理,这种降低可能归因于Si应用的CD浓度和CD诱导的氧化损伤。

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