首页> 外文会议>2011 International Symposium on Water Resource and Environmental Protection >Silicon-induced alleviation of cadmium toxicity in hyperaccumulator Solanum nigrum L
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Silicon-induced alleviation of cadmium toxicity in hyperaccumulator Solanum nigrum L

机译:硅诱导的超蓄积龙葵中镉毒性的减轻

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Silicon-induced amelioration of cadmium toxicity in the cadmium-hyperaccumulator Solanum nigrum L was investigated. Four-week-old seedlings of S. nigrum exposed to 200 µmol/L Cd with or without 1 mmol/L Si for 4 days. Malondialdehyde and electrolyte leakage in leaves were dramatically enhanced in single Cd treatment, and photosynthesis and biomass were seriously depressed. In comparison with the Cd treatment alone, lipid peroxidation and electrolyte leakage were significantly reduced in Cd plus Si treatment; shoot height, root length and dry weight were strongly increased; in addition, Cd concentrations in seedlings were decreased, while Cd translocation from root to shoot was remarkably enhanced. Furthermore, the activities of superoxide dismutase, peroxidases, and catalase in Cd plus Si treatment were significantly lower than that in Cd treatment alone, this decrease might be attributed to the reduction of Cd concentrations and Cd-induced oxidative damage by Si application.
机译:研究了硅诱导的镉毒性在镉 - 超沉淀物中溶铀NIGRUM L的改善。 S.幼苗的S. nigrum幼苗暴露于200μmol/ L Cd,或没有1mmol / L Si 4天。单镉处理中血液中的丙二醛和电解质泄漏显着增强,并且严重抑制了光合作用和生物质。与单独的Cd处理相比,CD加SI处理中脂质过氧化和电解质泄漏显着降低;拍摄高度,根长度和干重强烈增加;此外,幼苗中的Cd浓度降低,而来自根部拍摄的CD易位显着增强。此外,CD加SI处理中超氧化物歧化酶,过氧化物酶和过氧化氢酶的活性显着低于单独的Cd处理中的活性,这减少可归因于Si应用的CD浓度和CD诱导的氧化损伤。

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