Method of Matrix Alignment for nano structure lithography

摘要

Nanoimprint is an emerging lithographic technology that promises high-throughput pattering of nanostructures. Based on the mechanical embossing principle, nanoimprint technique can achieve pattern resolutions beyond the limitations set by the light diffraction or beam scattering in other conventional techniques. The difficulty arises with the exact 90° setting of the mould above the wafer. Proposed is the method of achieving this perpendicularity by the means of the crystallographic properties of Si or GaAs and the matrix made of the above-mentioned materials.