Low-threshold continuous-wave 1.55-#x03BC;m GaInNAsSb lasers

摘要

We present the first low-threshold 1.55-μm lasers grown on GaAs. The active layer was a single GaInNAsSb quantum well surrounded by strain-compensating GaNAs barriers. The room-temperature, continuous-wave, threshold current density was 579 A/cm2 and peak output power was 130 mW.