AN ANALYTICAL SINGLE-ELECTRON-TRANSISTOR MODEL BASED ON FREE ENERGY DIFFERENCE ACROSS THE TUNNELING BARRIER

摘要

In this paper, we propose an analytical single electron transistors (SET) model based on single-electron tunneling phenomenon, which is conventionally described by the orthodox theory. While most of the single electron transistor analytical models found in the literature focused on unilateral electron tunneling across the tunneling junctions, the proposed model uses free energy difference between energy levels on each side of the tunneling barriers and considers electron tunneling from either side of the barriers. The simulation results of the proposed model are quite close to those of the widely accepted Monte-Carlo SET simulator SIMON 2.0.