Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar~+ ions

摘要

The fluence dependence of the Si sputtering by 1 keV Ar~+ has been studied by molecular dynamcis simulations. To this purpose, previously amorphized samples with different initial argon concentration have been ion bombarded and the sputtered atoms have been analyzed. Teh calculated sputtering yield increases with the argon content according to the experimental results. The mechanisms involved in this sputtering enhancement are discussed.