Surface-wave-plasma chemical vapor deposition of SiN_x for thin-film encapsulation of organic light-emitting displays

摘要

Transparent SiN_x films with a water vapor transmittance rate of 4×10~(-7) g/m~2/d were successfully obtained using a surface-wave-plasma-chemical vapor deposition system by controlling the distance between the plasma and the substrate. According to plasma diagnostics, the hydrogen radical concentration decreased with increase in the distance, which resulted in a higher density SiN_x film.