Energy Efficient a-Si:H Half-Corbino TFT with Enhanced Electrical Stability

摘要

The amorphous silicon (a-Si:H) half-Corbino thin-film transistor (TFT) was fabricated with a five-photomask process used in the processing of the active matrix liquid-crystal displays (AM-LCD). We showed that the a-Si:H half-Corbino TFT has the asymmetric electrical characteristics under different drain-bias conditions. In comparison to fork-shaped TFT, the ON current level can be significantly enhanced by adopting half-Corbino shape electrode with the same device dimensions, while the field-effect mobility and threshold voltage remain identical for the same bias condition. Finally, we also showed a-Si:H half-Corbino TFT can be used as a driving or switching TFT for flat panel displays with its enhanced energy efficiency.