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High-Q BZT Ceramics for Microwave Applications

机译:用于微波应用的高Q BZT陶瓷

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摘要

Ba(Zn_(1/3)Ta_(2/3))O_3 (BZT) ceramics were prepared by solid-state reaction and sintered in air at temperatures in the range 1550-1650°C, for 2 hours. In order to improve the microwave and millimeter wave properties, annealing treatment at 1400°C for 10 hours was applied. The long-range order with a 2:1 ratio of Ta and Zn ions on the octahedral positions of the perovskite structure and the vibrational modes were investigated by using XRD and Raman spectroscopy as function of sintering temperature. Presence of small amount of secondary phase, Ba_8ZnTa_6O_(24), affects Q factor even in the dense, highly ordered samples. The dielectric parameters were measured in the microwave range by Hakki-Coleman method and were correlated with structural and optical properties. Sintering temperature higher than 1600°C are required for BZT ceramics in order to obtain low microwave loss (Q x f ~ 100 THz).
机译:通过固态反应制备BA(Zn_(1/3)Ta_(2/3))O_3(BZT)陶瓷,并在1550-1650℃的温度下在空气中烧结2小时。 为了改善微波和毫米波性能,施加1400℃的退火处理10小时。 通过使用XRD和拉曼光谱法研究了钙钛矿结构的八半菌结构和振动模式的TA和Zn离子的长距离顺序,并使用XRD和拉曼光谱作为烧结温度。 即使在密集,高度有序的样品中,也会影响少量二次相的Ba_8zNTA_6O_(24)。 通过Hakki-Coleman方法在微波范围内测量介电参数,与结构和光学性质相关。 BZT陶瓷需要高于1600°C的烧结温度,以获得低微波损耗(Q X F〜100 THz)。

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