The Emission Power of ZnO Nanoparticle based LEDs enhanced by adding Silica nanoparticles.

摘要

Light-emitting diodes (LEDs) based on wide bandgap semiconductor have considerable attention for fabricating lighting devices, mobile appliances and medical instruments. Zinc Oxide (ZnO) with a large direct bandgap of 3.37 eV is one of the candidates to realize commercial ultraviolet (UV) emission devices. ZnO nanoparticle (NP) based light emitting devices were fabricated using nitrogen-doped ZnO nanoparticles by coating methods on electrode film . We had reported the enhancement of emission intensity of ZnO NP based LEDs by inserting p-type NPs active layer . However, it still has a problem of leakage current in the ZnO NPs with binder layer. In this study, for improving emission intensity and reducing leakage current, we added silica NPs with p-ZnO NPs in the hole transporting layer.