首页> 外文会议>応用物理学会春季学術講演会;応用物理学会 >Polycrystalline DefectsOrigin of Reverse Leakage Current in HVPE (001)β-Ga_2O_3 SBDs Identified by High Sensitive Emission Microscope

【24h】

Polycrystalline DefectsOrigin of Reverse Leakage Current in HVPE (001)β-Ga_2O_3 SBDs Identified by High Sensitive Emission Microscope

机译：通过高敏感发射显微镜识别的HVPE（001）β-GA_2O_3 SBD的反向漏电流的多晶缺陷型胰蛋白

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

Polycrystalline defect is found to be one of themain reverse leakage current paths of HVPE (001)β-Ga_2O_3 SBDs.

机译：发现多晶缺陷是其中一个 HVPE的主要反向漏电流路径（001） β-GA_2O_3 SBD。

著录项

来源
《応用物理学会春季学術講演会;応用物理学会》||16.048-16.048|共1页
会议地点
作者
S. Sdoeung; K. Sasaki; K. Kawasaki; J. Hirabayashi; A. Kuramata; M. Kasu;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类
关键词

相似文献

外文文献
专利

1. Polycrystalline defects-origin of leakage current-in halide vapor phase epitaxial (001) β-Ga_2O_3 Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and synchrotron X-ray topography [J] . Sdoeung Sayleap, Sasaki Kohei, Kawasaki Katsumi, Applied physics express . 2021 ,第3期

机译：多晶缺陷 - 漏电流卤化物卤化物阶段外延（001）β-GA_2O_3肖特基势垒二极管通过超高敏感发射显微镜和同步X射线形貌鉴定
2. Origin of reverse leakage current path in edge-defined film-fed growth (001) β-Ga_2O_3 Schottky barrier diodes observed by high-sensitive emission microscopy [J] . Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Applied Physics Letters . 2020 ,第2期

机译：通过高敏感发射显微镜观察到的边缘定义的薄膜喂养生长（001）β-GA_2O_3肖特基势垒二极管的反向漏电流路径的起源
3. Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current: A case study in β-Ga_2O_3 [J] . Wenshen Li, Kazuki Nomoto, Debdeep Jena, Applied Physics Letters . 2020 ,第22期

机译：热离子发射或隧道？用于理想肖特基反向泄漏电流的通用过渡电场：β-GA_2O_3的案例研究
4. Observation of Reverse Leakage Currentin(001)Î²-Gallium Oxide Schottky Barrier Diodesby High Sensitive Emission Microscope [C] . ã‚¹ãƒ€ãƒ¼ãƒ³ ã‚»ã‚¤ãƒªãƒ¼ãƒ—, ä½ã€…æœ¨å…¬å¹³, å€‰åˆæœ—äºº, å¿œç”¨ç‰©ç†å¦ä¼šå¦è¡“è¬›æ¼”ä¼š;å¿œç”¨ç‰©ç†å¦ä¼š . 2020

机译：（001）β-镓氧化镓肖特基二极管高敏感发射显微镜的反向漏电流观察
5. A Global Finite Element Reverse Approach for Identifying the Material Elasticity and Current State of Stress [D] . Tartibi, Mehrzad. 2015

机译：一种用于识别材料弹性和压力状态的全局有限元反向方法
6. Scanning tunnelling microscope light emission: Finite temperature current noise and over cut-off emission [O] . Vijith Kalathingal, Paul Dawson, J. Mitra -1

机译：扫描隧道显微镜发光：有限温度电流噪声和过截止辐射
7. Comparison between laser terahertz emission microscope and conventional methods for analysis of polycrystalline silicon solar cell [O] . Hidetoshi Nakanishi, Akira Ito, Kazuhisa Takayama, 2015

机译：激光太赫兹发射显微镜与传统多晶硅太阳能电池分析方法的比较

Polycrystalline DefectsOrigin of Reverse Leakage Current in HVPE (001)β-Ga_2O_3 SBDs Identified by High Sensitive Emission Microscope

摘要

著录项

相似文献

相关主题

期刊订阅