Silicon Carbide Inverter for EV/HEV Application featuring Open-loop Drive Circuit Technology for Low Switching Loss and Surge Voltage Reduction: Presented at EVS 31 EVTeC 2018, Kobe, Japan, October 1 - 3, 2018

摘要

This paper presents a silicon carbide (SiC) inverter prototype with a proposed gate driver circuit achieving average efficiency of 98.5% on an 80 kW motor test bench under the Worldwide harmonized Light duty driving Test Cycle (WLTC) mode.