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Surface flashover hall effect

机译:表面闪络霍尔效应

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摘要

When a solid insulator in vacuum is subjected to a high-voltage pulse with short rise time, a low-resistance flashover path may be formed in a few nanoseconds across several centimeters of insulator surface.1,2 Although the details of the breakdown mechanism remain obscure, it is generally accepted that field emission of electrons at the cathode-insulator-vacuum junction and insulator surface charging are involved. Experimental measurements of properties of the flashover during its development across the insulator surface, reported here, provide strong evidence that positive surface charging by secondary electron emission (SEE) plays a major role in the formation of the flashover path.
机译:当真空的固体绝缘体具有短升高时间的高压脉冲时,可以在几厘米的绝缘体表面上形成低电阻闪络路径,尽管击穿机构的细节仍然存在 模糊,涉及阴极 - 绝缘体 - 真空结和绝缘体表面充电的电子的场发射。 在这里报道的绝缘体表面上的闪络器中的实验测量在其外绝缘体表面上,提供了强的证据,即二次电子发射(参见)的正面充电(参见)在闪络路径的形成中起主要作用。

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