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Surface flashover hall effect

机译:表面闪络霍尔效应

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摘要

When a solid insulator in vacuum is subjected to a high-voltage pulse with short rise time, a low-resistance flashover path may be formed in a few nanoseconds across several centimeters of insulator surface.1,2 Although the details of the breakdown mechanism remain obscure, it is generally accepted that field emission of electrons at the cathode-insulator-vacuum junction and insulator surface charging are involved. Experimental measurements of properties of the flashover during its development across the insulator surface, reported here, provide strong evidence that positive surface charging by secondary electron emission (SEE) plays a major role in the formation of the flashover path.
机译:当真空中的固态绝缘子受到上升时间短的高压脉冲时,可能会在几厘米的绝缘子表面几纳秒内形成低电阻闪络路径.1,2尽管击穿机理的细节仍然存在晦涩的是,通常认为涉及阴极-绝缘体-真空结处的电子场发射和绝缘体表面电荷。在此报道的跨绝缘子表面发展过程中闪络特性的实验测量提供了有力的证据,表明二次电子发射(SEE)引起的正表面电荷在闪络路径的形成中起着重要作用。

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