In this paper we have synthesized thin films of undoped and Mn doped ZnO samples with varying Mn percentage (2% at.wt., 4% at.wt., 6% at.wt.) by two step process i.e. sol-gel and hydrothermal process. This study reported the structural, surface, optical and electrical properties of the samp les by using XRD, FESEM, UV-vis spectroscopy and Keithley instruments. The XRD spectra confirms that all the prepared thin films have hexagonal wurtzite structure, the cell parameters increase with the increase of doping concentration, confirming the Mn substitution into the host lattice. Red shift of the UV emission has occurred in all the doped samples is attributed to decrease in particle size and increase in the concentration of oxygen vacancies on ZnO surface, these defect levels are also confirmed by PL. The electrical characteristic shows increase in conductivity with rise in doping concentration in ZnO.
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