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Conductivity of Bulk Zinc Oxide Varistors under Dc and Pulsed Bias

机译:DC和脉冲偏压下批量氧化锌压敏电阻的电导率

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Zinc oxide (ZnO) varistors is widely used in over voltage protection of various circuits for its advantages of excellent nonlinear, fast response time and low power consumption. Commercial ZnO varistors was selected and its dc and pulse conductivity was tested. Based on ZnO grain boundary barrier model, the dc conductivity was analyzed in the Breakdown and Pre-breakdown regions. At the pulsed bias, the capacitive current and conduction current of ZnO varistors was obtained. The growth ratio of conduction current is greater than that of the capacitive current. The tunneling electric field coefficient of ZnO grain boundary barrier, the permittivity of boundary and the proportion of boundary thickness were calculated.
机译:氧化锌(ZnO)压敏电阻广泛用于各种电路的过电压保护,其优点是其优异的非线性,快速响应时间和低功耗。 选择了商业ZnO压敏电阻,并测试了其DC和脉冲电导率。 基于ZnO晶界屏障模型,在击穿和预击穿区域中分析了DC电导率。 在脉冲偏置处,获得ZnO变阻器的电容电流和导通电流。 导通电流的生长比大于电容电流的增长率。 计算Zno晶界屏障的隧道电场系数,边界的介电常数和边界厚度的比例。

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