Switching Dynamics Measurement of Ferroelectric Y-Doped HfO_2 MIM Capacitors

摘要

The switching dynamics of ferroelectric Y-doped HfO_2 films are evaluated and the thickness or the remnant polarization dependence is shown. Based on the data fitting to the Kolmogorov-Avrami-Ishibashi (KAI) model, the films have shown a small nvalue, a parameter representing the dimension of the domain switching, of 1. This value is in contrast to the commonly observed values of over 2 for Hf_(0.5)Zr_(0.5)O_2 films.